document number: 93010 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 05-sep-08 1 hyperfast rectifier, 2 x 10 a fred pt tm 20CTH03/20CTH03fp vishay high power products features ? hyperfast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? fully isolated package (v ins = 2500 v rms ) ? to-220 designed and qualified for aec q101 level ? to-220fp designed and qualified for industrial level description/applications 300 v series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time. the planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for us e in the output rectification stage of smps, ups, dc-to-dc converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. product summary t rr (maximum) 35 ns i f(av) 2 x 10 a v r 300 v 20CTH03 to-220ab 20CTH03fp to-220 full-pak anode 1 3 2 base common cathode 2 common cathode anode anode 1 3 2 common cathode anode absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 300 v average rectified forward current per diode i f(av) t c = 160 c 10 a (full-pak) per diode t c = 135 c per device 20 non-repetitive peak surge current i fsm t j = 25 c 120 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 300 - - v forward voltage v f i f = 10 a - 1.05 1.25 i f = 10 a, t j = 125 c - 0.85 0.95 reverse leakage current i r v r = v r rated - - 20 a t j = 125 c, v r = v r rated - 6 200 junction capacitance c t v r = 300 v - 30 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93010 2 revision: 05-sep-08 20CTH03/20CTH03fp vishay high power products hyperfast rectifier, 2 x 10 a fred pt tm dynamic recovery characteristics (t c = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 50 a/s, v r = 30 v - - 35 ns i f = 1 a, di f /dt = 100 a/s, v r = 30 v - - 30 t j = 25 c i f = 10 a di f /dt = 200 a/s v r = 200 v -31- t j = 125 c - 42 - peak recovery current i rrm t j = 25 c - 2.4 - a t j = 125 c - 5.6 - reverse recovery charge q rr t j = 25 c - 36 - nc t j = 125 c - 120 - thermal - mechanical specifications parameter symbol test condtions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per diode r thjc mounting surface, flat, smooth and greased --1.5 c/w (full-pak) per diode - - 3.9 marking device case style to-220ab 20CTH03 case style to-220 full-pak 20CTH03fp
document number: 93010 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 05-sep-08 3 20CTH03/20CTH03fp hyperfast rectifier, 2 x 10 a fred pt tm vishay high power products fig. 1 - typical forward voltage dr op characteristics fig. 2 - typica l values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 100 0.4 0.6 2 1.4 1 1. 8 v f - forward voltage drop (v) i f - instantaneous forward current (a) 1.6 1.2 0. 8 t j = 175 c t j = 125 c t j = 25 c 0.01 0.1 1 10 100 50 100 200 250 300 0.001 v r - reverse voltage (v) i r - reverse current (ma) 150 t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 25 c t j = 50 c t j = 75 c 100 1000 0 100 200 250 300 10 v r - reverse voltage (v) c t - junction capacitance (pf) 150 50 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single p u lse (thermal resistance) . . p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 10 1
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93010 4 revision: 05-sep-08 20CTH03/20CTH03fp vishay high power products hyperfast rectifier, 2 x 10 a fred pt tm fig. 5 - maximum thermal impedance z thjc characteristics (full-pak) fig. 6 - maximum allowable case temperature vs. average forward current fig. 7 - maximum allowable case temperature vs. average forward current (full-pak) fig. 8 - forward powe r loss characteristics note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 8); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single p u lse (thermal resistance) . . p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 10 1 see note (1) s qu are w a v e (d = 0.50) rated v r applied dc 0246 8 16 14 12 10 1 8 0 170 160 150 140 i f(av) - average forward current (a) allowable case temperature (c) see note (1) s qu are w a v e (d = 0.50) rated v r applied dc 0246 8 16 14 12 10 1 8 0 170 160 150 100 i f(av) - average forward current (a) allowable case temperature (c) 140 130 120 110 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 0246 8 16 14 12 10 20 16 12 8 0 i f(av) - average forward current (a) average power loss (w) 4 rms limit dc
document number: 93010 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 05-sep-08 5 20CTH03/20CTH03fp hyperfast rectifier, 2 x 10 a fred pt tm vishay high power products fig. 9 - typical reverse recovery time vs. di f /dt fig. 10 - typical stored charge vs. di f /dt fig. 11 - reverse recovery parameter test circuit fig. 12 - reverse recovery waveform and definitions 10 100 1000 t rr (ns) di f /dt (a/s) 100 v r = 200 v i f = 10 a t j = 125 c t j = 25 c 1000 10 100 1000 q rr (nc) di f /dt (a/s) 100 v r = 200 v i f = 10 a t j = 125 c t j = 25 c irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adj u st q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of c u rrent thro u gh zero crossing (2) i rrm - peak re v erse reco v ery c u rrent (3) t rr - re v erse reco v ery time meas u red from zero crossing point of negati v e going i f to point w here a line passing thro u gh 0.75 i rrm and 0.50 i rrm extrapolated to zero c u rrent. (4) q rr - area u nder c u r v e defined b y t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of c u rrent d u ring t b portion of t rr
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 93010 6 revision: 05-sep-08 20CTH03/20CTH03fp vishay high power products hyperfast rectifier, 2 x 10 a fred pt tm ordering information table device code 1 - current rating (20 = 20 a) 2 - c = common cathode 3 - t = to-220, d 2 pak 4 - h = hyperfast recovery 5 - voltage rating (03 = 300 v) 6 - none = to-220ab fp = to-220 full-pak 7 - none = standard production pbf = lead (pb)-free tube standard pack quantity: 50 pieces 5 13 24 67 20 c t h 03 fp - links to related documents dimensions http://www.vishay.com/doc?95040 part marking information http://www.vishay.com/doc?95042
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